IndiumV3, Main, Repository, bibRecord, 001F22

Comparative Study of the Microstructure of Bi2Se3 Thin Films Grown on Si(111) and InP(111) Substrates

Identifieur interne : 001F22 ( Main/Repository ); précédent : 001F21; suivant : 001F23

Comparative Study of the Microstructure of Bi2Se3 Thin Films Grown on Si(111) and InP(111) Substrates

Auteurs : RBID : Pascal:12-0222737

Descripteurs français

Pascal (Inist)
- Etude comparative, Microstructure, Couche mince, Microscopie électronique transmission, Microscopie électronique balayage, Epitaxie jet moléculaire, Plan expérience, Interface, Semiconducteur III-V, Composé III-V, Défaut cristallin, Séléniure de bismuth, Phosphure d'indium, Silicium, Bi2Se3, Substrat silicium, Substrat InP, Substrat indium phosphure, InP, 6855J, 8115H.

English descriptors

KwdEn :
- Bismuth selenides, Comparative study, Crystal defects, Experimental design, III-V compound, III-V semiconductors, Indium phosphide, Interfaces, Microstructure, Molecular beam epitaxy, Scanning electron microscopy, Silicon, Thin films, Transmission electron microscopy.

Abstract

Transmission electron microscopy (TEM) and scanning electron microscopy (SEM) have been carried out to clarify the microstructure of Bi₂Se₃ thin films grown by molecular beam epitaxy (MBE) on Si(111) and InP(111) substrates. The film grown on InP displays much better overall quality at the microstructural level than does the film grown on the Si substrate. A layer of poor crystalline quality at the interface followed by well-crystallized Bi₂Se₃ has been observed for both substrates. The thickness of this interface layer is not uniform; it varies across the sample from zero, showing a sharp interface between the substrate and Bi₂Se₃, up to ∼1 nm and ∼1.8 nm for Bi₂Se₃/InP and Bi₂Se₃/Si, respectively. Formation of rotation twin domains and lamellar twins has been observed and is described in detail for both substrates.

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Pascal:12-0222737

Le document en format XML

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Se<sub>3</sub>
 Thin Films Grown on Si(111) and InP(111) Substrates</title>
<author><name sortKey="Tarakina, N V" uniqKey="Tarakina N">N. V. Tarakina</name>
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<author><name sortKey="Schreyeck, S" uniqKey="Schreyeck S">S. Schreyeck</name>
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<author><name sortKey="Borzenko, T" uniqKey="Borzenko T">T. Borzenko</name>
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<author><name sortKey="Schumacher, C" uniqKey="Schumacher C">C. Schumacher</name>
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</author>
<author><name sortKey="Karczewski, G" uniqKey="Karczewski G">G. Karczewski</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Physics, Polish Academy of Sciences, Al. Lotnikov 32/46</s1>
<s2>02-668 Warsaw</s2>
<s3>POL</s3>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Pologne</country>
<wicri:noRegion>02-668 Warsaw</wicri:noRegion>
</affiliation>
<affiliation wicri:level="4"><inist:fA14 i1="03"><s1>Humboldt Visiting Professor at Experimentelle Physik III, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Centre for Complex Material Systems, Universität Würzburg, Am Hubland</s1>
<s2>97074 Würzburg</s2>
<s3>DEU</s3>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="1">Bavière</region>
<region type="district" nuts="2">District de Basse-Franconie</region>
<settlement type="city">Wurtzbourg</settlement>
</placeName>
<orgName type="university">Université de Wurtzbourg</orgName>
</affiliation>
</author>
<author><name sortKey="Brunner, K" uniqKey="Brunner K">K. Brunner</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Facperimentelle Physik III, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Centre for Complex Material Systems, Universität Würzburg, Am Hubland</s1>
<s2>97074 Wiirzburg</s2>
<s3>DEU</s3>
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<region type="district" nuts="2">District de Basse-Franconie</region>
<settlement type="city">Wurtzbourg</settlement>
</placeName>
<orgName type="university">Université de Wurtzbourg</orgName>
</affiliation>
</author>
<author><name sortKey="Gould, C" uniqKey="Gould C">C. Gould</name>
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<s2>97074 Wiirzburg</s2>
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<region type="district" nuts="2">District de Basse-Franconie</region>
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</placeName>
<orgName type="university">Université de Wurtzbourg</orgName>
</affiliation>
</author>
<author><name sortKey="Buhmann, H" uniqKey="Buhmann H">H. Buhmann</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Facperimentelle Physik III, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Centre for Complex Material Systems, Universität Würzburg, Am Hubland</s1>
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<placeName><region type="land" nuts="1">Bavière</region>
<region type="district" nuts="2">District de Basse-Franconie</region>
<settlement type="city">Wurtzbourg</settlement>
</placeName>
<orgName type="university">Université de Wurtzbourg</orgName>
</affiliation>
</author>
<author><name sortKey="Molenkamp, L W" uniqKey="Molenkamp L">L. W. Molenkamp</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Facperimentelle Physik III, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Centre for Complex Material Systems, Universität Würzburg, Am Hubland</s1>
<s2>97074 Wiirzburg</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="1">Bavière</region>
<region type="district" nuts="2">District de Basse-Franconie</region>
<settlement type="city">Wurtzbourg</settlement>
</placeName>
<orgName type="university">Université de Wurtzbourg</orgName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">12-0222737</idno>
<date when="2012">2012</date>
<idno type="stanalyst">PASCAL 12-0222737 INIST</idno>
<idno type="RBID">Pascal:12-0222737</idno>
<idno type="wicri:Area/Main/Corpus">001D58</idno>
<idno type="wicri:Area/Main/Repository">001F22</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">1528-7483</idno>
<title level="j" type="abbreviated">Cryst. growth des.</title>
<title level="j" type="main">Crystal growth & design</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Bismuth selenides</term>
<term>Comparative study</term>
<term>Crystal defects</term>
<term>Experimental design</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium phosphide</term>
<term>Interfaces</term>
<term>Microstructure</term>
<term>Molecular beam epitaxy</term>
<term>Scanning electron microscopy</term>
<term>Silicon</term>
<term>Thin films</term>
<term>Transmission electron microscopy</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude comparative</term>
<term>Microstructure</term>
<term>Couche mince</term>
<term>Microscopie électronique transmission</term>
<term>Microscopie électronique balayage</term>
<term>Epitaxie jet moléculaire</term>
<term>Plan expérience</term>
<term>Interface</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Défaut cristallin</term>
<term>Séléniure de bismuth</term>
<term>Phosphure d'indium</term>
<term>Silicium</term>
<term>Bi2Se3</term>
<term>Substrat silicium</term>
<term>Substrat InP</term>
<term>Substrat indium phosphure</term>
<term>InP</term>
<term>6855J</term>
<term>8115H</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Transmission electron microscopy (TEM) and scanning electron microscopy (SEM) have been carried out to clarify the microstructure of Bi<sub>2</sub>
Se<sub>3</sub>
 thin films grown by molecular beam epitaxy (MBE) on Si(111) and InP(111) substrates. The film grown on InP displays much better overall quality at the microstructural level than does the film grown on the Si substrate. A layer of poor crystalline quality at the interface followed by well-crystallized Bi<sub>2</sub>
Se<sub>3</sub>
 has been observed for both substrates. The thickness of this interface layer is not uniform; it varies across the sample from zero, showing a sharp interface between the substrate and Bi<sub>2</sub>
Se<sub>3</sub>
, up to ∼1 nm and ∼1.8 nm for Bi<sub>2</sub>
Se<sub>3</sub>
/InP and Bi<sub>2</sub>
Se<sub>3</sub>
/Si, respectively. Formation of rotation twin domains and lamellar twins has been observed and is described in detail for both substrates.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1528-7483</s0>
</fA01>
<fA03 i2="1"><s0>Cryst. growth des.</s0>
</fA03>
<fA05><s2>12</s2>
</fA05>
<fA06><s2>4</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Comparative Study of the Microstructure of Bi<sub>2</sub>
Se<sub>3</sub>
 Thin Films Grown on Si(111) and InP(111) Substrates</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>TARAKINA (N. V.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>SCHREYECK (S.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>BORZENKO (T.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>SCHUMACHER (C.)</s1>
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<fA11 i1="05" i2="1"><s1>KARCZEWSKI (G.)</s1>
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<fA11 i1="06" i2="1"><s1>BRUNNER (K.)</s1>
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<fA11 i1="07" i2="1"><s1>GOULD (C.)</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>BUHMANN (H.)</s1>
</fA11>
<fA11 i1="09" i2="1"><s1>MOLENKAMP (L. W.)</s1>
</fA11>
<fA14 i1="01"><s1>Facperimentelle Physik III, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Centre for Complex Material Systems, Universität Würzburg, Am Hubland</s1>
<s2>97074 Wiirzburg</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Institute of Physics, Polish Academy of Sciences, Al. Lotnikov 32/46</s1>
<s2>02-668 Warsaw</s2>
<s3>POL</s3>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Humboldt Visiting Professor at Experimentelle Physik III, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Centre for Complex Material Systems, Universität Würzburg, Am Hubland</s1>
<s2>97074 Würzburg</s2>
<s3>DEU</s3>
<sZ>5 aut.</sZ>
</fA14>
<fA20><s1>1913-1918</s1>
</fA20>
<fA21><s1>2012</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>27261</s2>
<s5>354000506917330270</s5>
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<fA44><s0>0000</s0>
<s1>© 2012 INIST-CNRS. All rights reserved.</s1>
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<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Crystal growth & design</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Transmission electron microscopy (TEM) and scanning electron microscopy (SEM) have been carried out to clarify the microstructure of Bi<sub>2</sub>
Se<sub>3</sub>
 thin films grown by molecular beam epitaxy (MBE) on Si(111) and InP(111) substrates. The film grown on InP displays much better overall quality at the microstructural level than does the film grown on the Si substrate. A layer of poor crystalline quality at the interface followed by well-crystallized Bi<sub>2</sub>
Se<sub>3</sub>
 has been observed for both substrates. The thickness of this interface layer is not uniform; it varies across the sample from zero, showing a sharp interface between the substrate and Bi<sub>2</sub>
Se<sub>3</sub>
, up to ∼1 nm and ∼1.8 nm for Bi<sub>2</sub>
Se<sub>3</sub>
/InP and Bi<sub>2</sub>
Se<sub>3</sub>
/Si, respectively. Formation of rotation twin domains and lamellar twins has been observed and is described in detail for both substrates.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A15H</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B60H55J</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Etude comparative</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Comparative study</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Estudio comparativo</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Microstructure</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Microstructure</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Couche mince</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Thin films</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Microscopie électronique transmission</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Transmission electron microscopy</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Microscopie électronique balayage</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Scanning electron microscopy</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Plan expérience</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Experimental design</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Interface</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Interfaces</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Composé III-V</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>III-V compound</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Compuesto III-V</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Défaut cristallin</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Crystal defects</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Séléniure de bismuth</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Bismuth selenides</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Phosphure d'indium</s0>
<s5>16</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Indium phosphide</s0>
<s5>16</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Indio fosfuro</s0>
<s5>16</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Silicium</s0>
<s2>NC</s2>
<s5>17</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Silicon</s0>
<s2>NC</s2>
<s5>17</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Bi2Se3</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Substrat silicium</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Substrat InP</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Substrat indium phosphure</s0>
<s4>INC</s4>
<s5>49</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>InP</s0>
<s4>INC</s4>
<s5>50</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>6855J</s0>
<s4>INC</s4>
<s5>65</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>8115H</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fN21><s1>170</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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Comparative Study of the Microstructure of Bi2Se3 Thin Films Grown on Si(111) and InP(111) Substrates

Comparative Study of the Microstructure of Bi2Se3 Thin Films Grown on Si(111) and InP(111) Substrates

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